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| PROCESS Fast Recovery Rectifier CPD24 Central TM 1.0 Amp Glass Passivated Rectifier Chip Semiconductor Corp. PROCESS DETAILS Process Die Size Die Thickness Anode Bonding Pad Area Top Side Metalization Back Side Metalization GLASS PASSIVATED MESA 50 x 50 MILS 10.6 MILS 34 x 34 MILS Au - 5,000A Au - 2,000A GEOMETRY GROSS DIE PER 4 INCH WAFER 4,520 PRINCIPAL DEVICE TYPES 1N4933 thru 1N4937 1N4942 thru 1N4948 1N5615 thru 1N5623 CMR1F-02M Series The Typical Electrical Characteristics data for this chip is currently being revised. For the latest updated data for this Chip Process, please visit our website at: BACKSIDE CATHODE 145 Adams Avenue Hauppauge, NY 11788 USA Tel: (631) 435-1110 Fax: (631) 435-1824 www.centralsemi.com www.centralsemi.com/chip R1 (1-August 2002) |
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